Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions
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===Chromium etch in ICP metal=== | |||
The Chromium etch was carried out on the following substrate stack: | |||
2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. | |||
The work was carried out be Erol Zekovic @Nanotech and BGHE@danchip | |||
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | |||
|+ '''Cr etch''' | |||
|- | |||
! Parameter | |||
|'''Cr etch''' | |||
|- | |||
! Cl<sub>2</sub> (sccm) | |||
| 65 | |||
|- | |||
! O<sub>2</sub> (sccm) | |||
| 15 | |||
|- | |||
! Pressure (mTorr) | |||
| 15 | |||
|- | |||
! Coil power (W) | |||
| 300 | |||
|- | |||
! Platen power (W) | |||
| 15 | |||
|- | |||
! Temperature (<sup>o</sup>C) | |||
| 50 | |||
|- | |||
! Spacers (mm) | |||
| 100 | |||
|- | |||
! Etch rate (nm/min) | |||
| ~32 (Date: 2014-08-13) | |||
|- | |||
!Zep520A resist selectivity | |||
| NA | |||
|- | |||
!Comment | |||
| Was masked by capton tape | |||
|} | |||
===Chromium etch in ICP metal=== | ===Chromium etch in ICP metal=== | ||
Revision as of 11:05, 14 August 2014
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Chromium etch in ICP metal
The Chromium etch was carried out on the following substrate stack: 2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. The work was carried out be Erol Zekovic @Nanotech and BGHE@danchip
| Parameter | Cr etch |
|---|---|
| Cl2 (sccm) | 65 |
| O2 (sccm) | 15 |
| Pressure (mTorr) | 15 |
| Coil power (W) | 300 |
| Platen power (W) | 15 |
| Temperature (oC) | 50 |
| Spacers (mm) | 100 |
| Etch rate (nm/min) | ~32 (Date: 2014-08-13) |
| Zep520A resist selectivity | NA |
| Comment | Was masked by capton tape |
Chromium etch in ICP metal
The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.
| Parameter | Cr etch |
|---|---|
| Cl2 (sccm) | 65 |
| O2 (sccm) | 15 |
| Pressure (mTorr) | 15 |
| Coil power (W) | 300 |
| Platen power (W) | 15 |
| Temperature (oC) | 50 (no back side cooling) |
| Spacers (mm) | 100 |
| Etch rate (nm/min) | ~14 |
| Zep520A resist selectivity | ~0.9 |
| Comment | . |