Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions

Revision as of 12:47, 14 July 2014

Resist	Polarity	Manufacturer	Comments	Technical reports	Spinner	Developer	Rinse	Remover	Process flows (in docx-format)
mr EBL 6000	Positive	MicroResist	Standard negative resist	mrEBL6000 processing Guidelines.pdf‎	Manual Spinner 1 (Laurell), Spin Coater Labspin	mr DEV	IPA		Process_Flow_mrEBL6000.docx‎

Process Flow

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment	Process Parameters	Comments
Pretreatment
4" Si wafers	No Pretreatment
Spin Coat
Spin Coater Manual, LabSpin, A-5	AR-P 6200/2 AllResist E-beam resist 60 sec at various spin speed. Acceleration 4000 s-2, softbake 1 - 5 min at 150 deg Celcius	Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist here.
Characterization
Ellipsometer VASE B-1	9 points measured on 100 mm wafer	ZEP program used; measured at 70 deg only
E-beam Exposure
JEOL 9500 E-beam writer, E-1	Dosepattern 15nm - 100nm, dose 120-280 muC/cm2	Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
Development
Fumehood, D-3	60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry	Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
Characterization
Zeiss SEM Supra 60VP, D-3	2-3 kV, shortest working distance possible, chip mounted with Al tape	The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information.

Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

MicroResist mr EBL 6000 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 14-07-2014. Softbake 3 min @ 110 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	2000
3000	2000
4000	2000
5000	2000
6000	2000

@@ Line 32: / Line 32: @@
+== Process Flow ==
+Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
+{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
+|-
+|-
+|-style="background:Black; color:White"
+!Equipment
+!Process Parameters
+!Comments
+|-
+|-
+|-style="background:WhiteSmoke; color:black; text-align:center"
+!colspan="4"|Pretreatment
+|-
+|-
+|-style="background:LightGrey; color:black"
+|4" Si wafers
+|No Pretreatment
+|
+|-
+|-
+|-style="background:WhiteSmoke; color:black; text-align:center"
+!colspan="4"|Spin Coat
+|-
+|-
+|-style="background:LightGrey; color:black"
+|Spin Coater Manual, LabSpin, A-5
+|AR-P 6200/2 AllResist E-beam resist
+sec at various spin speed.
+Acceleration 4000 s-2,
+softbake 1 - 5 min at 150 deg Celcius
+|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
+|-
+|-
+|-style="background:WhiteSmoke; color:black; text-align:center"
+!colspan="4"|Characterization
+|-
+|-
+|-style="background:LightGrey; color:black"
+|Ellipsometer VASE B-1
+|9 points measured on 100 mm wafer
+|ZEP program used; measured at 70 deg only
+|-
+|-
+|-style="background:WhiteSmoke; color:black; text-align:center"
+!colspan="4"|E-beam Exposure
+|-
+|-
+|-style="background:LightGrey; color:black"
+|JEOL 9500 E-beam writer, E-1
+|Dosepattern 15nm - 100nm,
+dose 120-280 muC/cm2
+|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
+|-
+|-
+|-style="background:WhiteSmoke; color:black; text-align:center"
+!colspan="4"|Development
+|-
+|-
+|-style="background:LightGrey; color:black"
+|Fumehood, D-3
+|60 sec in X AR 600-54/6,
+sec rinse in IPA,
+N2 Blow dry
+|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
+|-
+|-
+|-style="background:WhiteSmoke; color:black; text-align:center"
+!colspan="4"|Characterization
+|-
+|-
+|-style="background:LightGrey; color:black"
+|Zeiss SEM Supra 60VP, D-3
+|2-3 kV, shortest working distance possible, chip mounted with Al tape
+|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
+|-
+|}
+== Spin Curve ==
 [[File:SpinCurveMrEBL6000.jpg|right|600px]]