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| == Comparing the three bonding methods in the EVG NIL ==
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| |style="background:WhiteSmoke; color:black"|<b>[[/Eutectic bonding|Eutectic bonding]]</b>
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| |style="background:WhiteSmoke; color:black"|<b>[[/Fusion bonding|Fusion bonding]]</b>
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| |style="background:WhiteSmoke; color:black"|<b>[[/Anodic bonding|Anodic bonding]]</b>
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| !style="background:silver; width:100px; color:black;" align="center"|General description
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| For bonding two substrates by use of an interphase that makes an eutecticum.
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| For bonding two identical materials.
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| For bonding Si and Glass.
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| !style="background:silver; color:black" align="center" valign="center"|Bonding temperature
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| Depending on the eutecticum 310°C to 400°C.
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| Depending on defects 50°C to 400°C.
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| Depending on the voltage 300°C to 500°C Standard is 400°C.
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| !style="background:silver; color:black" align="center" valign="center"|Annealing temperature
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| No annealing
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| 1000°C in the bond furnace C3.
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| No annealing
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| !style="background:silver; color:black" align="center" valign="center"|Materials possible to bond
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| Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni
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| Si/Si, SiO2/SiO2
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| Si/Pyrex (glass)
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| !style="background:silver; color:black" align="center" valign="center"|Substrate size
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| Up to 6" (aligning only possible for 4" and 6")
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| Up to 6" (aligning only possible for 4" and 6")
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| Up to 6" (aligning only possible for 4" and 6")
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| !style="background:silver; color:black" align="center" valign="center"|Cleaning
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| Cleaning by N2.
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| Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
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| Cleaning by N2.
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| !style="background:silver; color:black" align="center" valign="center"|IR alignment
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| Double side polished wafers.
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| Double side polished wafers.
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| Not relevant.
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| == Choose equipment == | | == Choose equipment == |
| *[[/EVG NIL|EVG NIL]] | | *[[/EVG NIL|EVG NIL]] |
