Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

Revision as of 17:15, 25 March 2014

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Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	Sputter (Lesker)
General description	E-beam deposition of Ta	Sputter deposition of Ta
Pre-clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to
Deposition rate	2Å/s to 15Å/s	~0.3Å/s
Batch size	Up to 1x4" wafers smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment

* For thicknesses above 200 nm permission is required.

@@ Line 14: / Line 14: @@
 |-
 |-style="background:WhiteSmoke; color:black"
-! Batch size
+! General description
-|
+| E-beam deposition of Ta
-*Up to 1x4" wafers
+| Sputter deposition of Ta
-*smaller pieces
-|
-*Pieces or
-*1x4" wafer or
-*1x6" wafer
 |-
 |-
@@ Line 39: / Line 34: @@
 |~0.3Å/s
 |-
 |-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*Up to 1x4" wafers
+*smaller pieces
+|
+*Pieces or
+*1x4" wafer or
+*1x6" wafer
+|-
+|-style="background:LightGrey;  color:black"
 !Allowed materials
@@ Line 63: / Line 70: @@
 * Carbon
-|-style="background:LightGrey; color:black"
+|-style="background:WhiteSmoke; color:black"
 ! Comment
 |