Specific Process Knowledge/Thin film deposition/Deposition of Tin: Difference between revisions

Revision as of 16:12, 25 March 2014

Feedback to this page: click here

Tin can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)
General description	E-beam deposition of Sn
Pre-clean	RF Ar clean
Layer thickness	10Å to 1µm*
Deposition rate	2Å/s to 15Å/s
Pre-clean	RF Ar clean
Batch size	Up to 1x4" wafers smaller pieces
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comment

* For thicknesses above 200 nm permission is required.

@@ Line 12: / Line 12: @@
 |-
 |-style="background:WhiteSmoke; color:black"
-! Batch size
+! General description
-|
+| E-beam deposition of Sn
-*Up to 1x4" wafers
-*smaller pieces
 |-
 |-style="background:LightGrey; color:black"
@@ Line 29: / Line 27: @@
 |2Å/s to 15Å/s
 |-
+|-style="background:WhiteSmoke; color:black"
+!Pre-clean
+|RF Ar clean
+|-style="background:LightGrey; color:black"
+! Batch size
+|
+*Up to 1x4" wafers
+*smaller pieces
+|-
 |-style="background:WhiteSmoke; color:black"
 !Allowed materials