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| *Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP | | *Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP |
| *Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3. | | *Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3. |
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| ==Comparison of the seven annealing equipments==
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| {| {{table}} border="2" cellspacing="0" cellpadding="8" width="1000pt"
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| | valign="top" align="center" style="background:#f0f0f0;"|
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br /> Boron drive-in'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''Nobel furnace'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
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| |-valign="top"
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| ! General description
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| |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
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| |-
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| ! Annealing with N<sub>2</sub>
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| |x||x||x||x||x||x||x
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| |-
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| !Wet annealing with bubler (water steam + N<sub>2</sub>)
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| |.||.||x||x||.||.||.
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| |-
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| !Process temperature [ <sup>o</sup>C ]
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| |800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C
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| |-valign="top"
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| ! Batch size
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| |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"|||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces
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| |-
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| !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''Nobel'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
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| |-
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| | New clean* Si wafers 4" (6" in C1)||.||.||.||x||x||x||x
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| |-
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| | RCA clean** Si wafers with no history of Metals on||x||x||x||x||x||x||x
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| |-
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| | From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||x||x||x||x||x
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| |-
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| | Wafers directly from PECVD1||.||.||x||x||x||x||x
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| |-
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| | Wafers directly from NIL bonding||.||.||.||x||x||x||x
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| |-
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| |Wafers with aluminium||.||.||.||.||x||x||.
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| |-
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| |wafers with other metals||.||.||.||||.||x||.
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| |-
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| |wafers with III-V materials||||||||||||||x
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| |-
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| |}
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| <nowiki>*</nowiki>New clean: only right from the new clean box. It is not allowed to put them in another box first.
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| <nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
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| {|border="1" cellspacing="1" cellpadding="4" style="text-align:left;" | | {|border="1" cellspacing="1" cellpadding="4" style="text-align:left;" |
