Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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*Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
*Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.
==Comparison of the seven annealing equipments==
{| {{table}} border="2" cellspacing="0" cellpadding="8" width="1000pt"
| valign="top" align="center" style="background:#f0f0f0;"|
| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br /> Boron drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''Nobel furnace'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-valign="top"
! General description
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
|-
! Annealing with N<sub>2</sub>
|x||x||x||x||x||x||x
|-
!Wet annealing with bubler (water steam + N<sub>2</sub>)
|.||.||x||x||.||.||.
|-
!Process temperature [ <sup>o</sup>C ]
|800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C
|-valign="top"
! Batch size
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"|||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces
|-
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:
| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''Nobel'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-
| New clean* Si wafers 4" (6" in C1)||.||.||.||x||x||x||x
|-
| RCA clean** Si wafers with no history of Metals on||x||x||x||x||x||x||x
|-
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||x||x||x||x||x
|-
| Wafers directly from PECVD1||.||.||x||x||x||x||x
|-
| Wafers directly from NIL bonding||.||.||.||x||x||x||x
|-
|Wafers with aluminium||.||.||.||.||x||x||.
|-
|wafers with other metals||.||.||.||||.||x||.
|-
|wafers with III-V materials||||||||||||||x
|-
|}
<nowiki>*</nowiki>New clean: only right from the new clean box. It is not allowed to put them in another box first.
<nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.


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Revision as of 14:57, 19 March 2014

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Annealing

At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.

  • Anneal with N2 can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
  • Wet anneal with H2O in a bubbler can be done in furnaces:C1 and C3.

C1: Anneal Oxide

C3: Anneal Bond

Noble furnace

Jipelec RTP

General description Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Annealing of almost materials on silicon wafer. Rapid thermal annealing
Annealing gas
  • N2
  • N2
  • Ar
  • Wet annealing with bobbler (water steam + N2)
  • N2
  • Ar
  • N2
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on carrier wafer
  • One 100 mm wafers on carrier wafer
Allowed materials
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from LPCVD furnaces and PECVD1.
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
  • Almost all materials, permission is need.
  • III-V samples
  • Silicon wafer
  • Some metals