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| ==Comparison of the methods for deposition of Titanium Oxide== | | ==Comparison of the methods for deposition of Titanium Oxide== |
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| !
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| !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
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| ! Sputter technique Lesker
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| | Stoichiometry
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| *Can probably be varied (sputter target: Ti, O2 added during deposition)
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| *
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| |Film thickness
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| *~10nm - ~0.5µm(>2h)
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| *Thin layers
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| |Deposition rate
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| *3.0-3.5nm/min ± ?
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| *
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| |Process Temperature
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| *Expected to be below 100<sup>o</sup>C
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| *
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| |Step coverage
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| *Not Known
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| *
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| |Film quality
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| *
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| *
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| |Batch size
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| *1 50mm wafer
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| *1 100mm wafer
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| *1 150mm wafer
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| *1 200mm wafer
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| *Smaller pieces can be mounted with capton tape
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| *
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| |Material allowed
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| *Almost any materials
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| *not Pb and very poisonous materials
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| *
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| |More process info on TiO2
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| *[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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| *
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Deposition of Titanium Oxide
Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
Comparison of the methods for deposition of Titanium Oxide
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|
Sputter technique using IBE/IBSD Ionfab300
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Sputter System Lesker
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| Generel description
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Generel description - method 1
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Generel description - method 2
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| Stoichiometry
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- Can probably be varied (sputter target: Ti, O2 added during deposition)
|
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| Film Thickness
|
|
|
| Deposition rate
|
|
|
| Step coverage
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|
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| Process Temperature
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- Expected to be below 100oC
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| More info on TiO2
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| Substrate size
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- 1 50mm wafer
- 1 100mm wafer
- 1 150mm wafer
- 1 200mm wafer
- Smaller pieces can be mounted with capton tape
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- # small samples
- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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| Allowed materials
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- Almost any materials
- not Pb and very poisonous materials
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- Allowed material 1
- Allowed material 2
- Allowed material 3
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