Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
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Revision as of 13:35, 17 March 2014

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Deposition of Titanium Oxide

Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.

Comparison of the methods for deposition of Titanium Oxide

Sputter technique using IBE/IBSD Ionfab300 Sputter technique Lesker
Stoichiometry
  • Can probably be varied (sputter target: Ti, O2 added during deposition)
Film thickness
  • ~10nm - ~0.5µm(>2h)
  • Thin layers
Deposition rate
  • 3.0-3.5nm/min ± ?
Process Temperature
  • Expected to be below 100oC
Step coverage
  • Not Known
Film quality
Batch size
  • 1 50mm wafer
  • 1 100mm wafer
  • 1 150mm wafer
  • 1 200mm wafer
  • Smaller pieces can be mounted with capton tape
Material allowed
  • Almost any materials
  • not Pb and very poisonous materials
More process info on TiO2
Sputter technique using IBE/IBSD Ionfab300 Sputter System Lesker
Generel description Generel description - method 1 Generel description - method 2
Stoichiometry
  • A
  • B
  • A
  • B
Film Thickness
  • A
  • B
  • C
  • A
Deposition rate
  • A
  • B
  • A
  • B
Step coverage
  • A
  • B
  • C
  • A
Process Temperature
  • A
  • B
  • A
  • B
More info on TiO2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
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