Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:

	Sputter(PVD co-sputter/evaporation)	Furnace PolySi (Furnace LPCVD pSi)	Sputter (Wordentec)	Sputter (IBE/IBSD Ionfab 300)	Sputter (Alcatel)
Batch size	4x 6" wafers or 4x 4" wafers or 4x 2" wafers	1-25 wafers of 4" For other sizes ask the ThinFilm group	24x 2" wafers or 6x 4" wafers or 6x 6" wafers	Several small samples mounted with capton tape 1x 50 mm wafer 1x 100 mm wafer 1x 150 mm wafer 1x 200 mm wafer	Up to 1x4" wafers smaller pieces
Pre-clean	RF Ar clean	RCA clean for wafers that are not fresh form the box.	RF Ar clean	.	RF Ar clean
Layer thickness	10Å to about 3000Å	~50Å to 2µm, if thicker layers are needed please ask the furnace team.	10Å to about 3000Å	.	10Å to 2000Å
Deposition rate	Dependent on process parameters, but in the order of 1 Å/s. See more here	undoped, boron doped:~100Å/min Phospher doped:~20Å/min	. Dependent on process parameters, but in the order of 1 Å/s. See more here.	About 6-8 nm/min. See more here.	2Å/s to 15Å/s
Process temperature	Option: heating wafer up to 400 deg C	560 ^oC (amorph) and 620 ^oC (poly)	?	.	?
Step coverage	.	Good	.	.	Poor
Adhesion	.	Good for fused silica, silicon oxide, silicon nitride, silicon	.	.	Bad for pyrex, for other materials we do not know
Allowed substrates	Pyrex, fused silica, silicon, metals, oxide, nitride	Fused silica, Silicon, oxide, nitride	Pyrex, fused silica, silicon, metals, oxide, nitride	.	Silicon wafers Quartz wafers Pyrex wafers
Allowed material					Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Doping facility	None	Can be doped during deposition with Boron and/or Phosphorous	None	.	None
Comment					This process is not running really stable nowadays.

Sputtered Silicon in the Alcatel

The parameter(s) changed	New value(s)	Deposition rate
Standard parameters	None
Power	400W	3.8 Å/s

Sputtered Silicon in the PVD co-sputter/evaporation

See this page: Si sputter in PVD co-sputter/evaporation

Sputtered Silicon in Wordentec

See this page: Si sputter in Wordentec

@@ Line 9: / Line 9: @@
 |-style="background:silver; color:black"
 !
-! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
 ! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
 ! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]])
 ! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 ! Sputter ([[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
+! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Batch size
 |
-*Up to 1x4" wafers
+* 4x 6" wafers or
-*smaller pieces
+* 4x 4" wafers or
+* 4x 2" wafers
 |
-* 4x6" wafers or
-* 4x4" wafers or
-* 4x2" wafers
-|.
 *1-25 wafers of 4"
 *For other sizes ask the ThinFilm group
 |
-*24x2" wafers or
+*24x 2" wafers or
-*6x4" wafers or
+*6x 4" wafers or
-*6x6" wafers
+*6x 6" wafers
 |
 * Several small samples mounted with capton tape
@@ Line 38: / Line 34: @@
 * 1x 150 mm wafer
 * 1x 200 mm wafer
+|
+*Up to 1x4" wafers
+*smaller pieces
 |-
 |-style="background:LightGrey; color:black"
 ! Pre-clean
-|RF Ar clean
 |RF Ar clean
 |RCA clean for wafers that are not fresh form the box.
 |RF Ar clean
 |.
+|RF Ar clean
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|10Å to 1µm
 |10Å to about 3000Å
 |~50Å to 2µm, if thicker layers are needed please ask the furnace team.
 |10Å to about 3000Å
 |.
+|10Å to 2000Å
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
-|2Å/s to 15Å/s
 |Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]]
 |
@@ Line 64: / Line 65: @@
 |.
 Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
-|.
+| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
+|2Å/s to 15Å/s
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Process temperature
-|?
 | Option: heating wafer up to 400 deg C
 |560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
 |?
 |.
+|?
 |-
 |-style="background:LightGrey; color:black"
 ! Step coverage
-|Poor
 |.
 |Good
 |.
 |.
+|Poor
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Adhesion
-|Bad for pyrex, for other materials we do not know
 |.
 |Good for fused silica, silicon oxide, silicon nitride, silicon
 |.
 |.
+|Bad for pyrex, for other materials we do not know
+|-
-|-
 |-style="background:LightGrey; color:black"
 ! Allowed substrates
-|
-* Silicon wafers
-* Quartz wafers
-* Pyrex wafers
 |Pyrex, fused silica, silicon, metals, oxide, nitride
 |Fused silica, Silicon, oxide, nitride
 |Pyrex, fused silica, silicon, metals, oxide, nitride
 |.
+|
+* Silicon wafers
+* Quartz wafers
+* Pyrex wafers
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Allowed material
+|
+|
+|
+|
 |
 * Silicon oxide
@@ Line 114: / Line 123: @@
 * SU-8
 * Metals
-|
-|
-|
-|
 |-
 |-style="background:LightGrey; color:black"
 ! Doping facility
-|None
 |None
 |Can be doped during deposition with Boron and/or Phosphorous
 | None
 |.
+|None
+|-style="background:WhiteSmoke; color:black"
+! Comment
+|
+|
+|
+|
+| This process is not running really stable nowadays.
 |}