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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]])
! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
 
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! Batch size
|
|
*Up to 1x4" wafers
* 4x 6" wafers or
*smaller pieces
* 4x 4" wafers or
* 4x 2" wafers
|
|
* 4x6" wafers or
* 4x4" wafers or
* 4x2" wafers
|.
*1-25 wafers of 4"
*1-25 wafers of 4"
*For other sizes ask the ThinFilm group
*For other sizes ask the ThinFilm group
|
|
*24x2" wafers or  
*24x 2" wafers or  
*6x4" wafers or
*6x 4" wafers or
*6x6" wafers
*6x 6" wafers
|   
|   
* Several small samples mounted with capton tape
* Several small samples mounted with capton tape
Line 38: Line 34:
* 1x 150 mm wafer
* 1x 150 mm wafer
* 1x 200 mm wafer  
* 1x 200 mm wafer  
|
*Up to 1x4" wafers
*smaller pieces
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RCA clean for wafers that are not fresh form the box.
|RCA clean for wafers that are not fresh form the box.
|RF Ar clean
|RF Ar clean
|.
|.
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1µm
|10Å to about 3000Å
|10Å to about 3000Å
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|10Å to about 3000Å
|10Å to about 3000Å
|.
|.
|10Å to 2000Å
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]]
|Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in PVD co-sputter/evaporation|here]]
|
|
Line 64: Line 65:
|.
|.
Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
|.
| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
|2Å/s to 15Å/s
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Process temperature
! Process temperature
|?
| Option: heating wafer up to 400 deg C
| Option: heating wafer up to 400 deg C
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|?
|?
|.
|.
|?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Step coverage
! Step coverage
|Poor
|.
|.
|Good
|Good
|.
|.
|.
|.
|Poor
|-
|-


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Adhesion
! Adhesion
|Bad for pyrex, for other materials we do not know
|.
|.
|Good for fused silica, silicon oxide, silicon nitride, silicon
|Good for fused silica, silicon oxide, silicon nitride, silicon
|.
|.
|.
|.
|Bad for pyrex, for other materials we do not know
|-


|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates  
! Allowed substrates  
|
 
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|Pyrex, fused silica, silicon, metals, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
|.
|.
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Allowed material  
! Allowed material  
|
|
|
|
|     
|     
* Silicon oxide
* Silicon oxide
Line 114: Line 123:
* SU-8
* SU-8
* Metals  
* Metals  
|
|
|
|
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Doping facility
! Doping facility
|None
|None
|None
|Can be doped during deposition with Boron and/or Phosphorous
|Can be doped during deposition with Boron and/or Phosphorous
| None
| None
|.
|.
|None
|-style="background:WhiteSmoke; color:black"
! Comment
|
|
|
|
| This process is not running really stable nowadays.
|}
|}


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