Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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|About 1Å/s | |About 1Å/s | ||
|About 10 to 250 Å/s | |About 10 to 250 Å/s | ||
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!Allowed materials | |||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
| | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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|- | |- | ||
|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
! Comment | ! Comment | ||
| Thicknesses above 200 nm requires special permission | | Thicknesses above 200 nm requires special permission |
Revision as of 13:13, 6 March 2014
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Nickel deposition
Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | Electroplating (Electroplating-Ni) | |
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Batch size |
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Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | None |
Layer thickness | 10Å to 5000 Å* | 10Å to 1 µm* | 10Å to 1000 Å | A few µm to 1400 µm |
Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | About 10 to 250 Å/s
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Allowed materials |
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Comment | Thicknesses above 200 nm requires special permission |
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Only very thin layers (up to 100nm). | Sample must be compatible with plating bath. Seed metal necessary. |
* To deposit layers thicker then 200 nm permission is required (contact Thin film group)