Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions
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*4x6" wafers | *4x6" wafers | ||
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*Pieces or | |||
*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
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! Pre-clean | ! Pre-clean | ||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|About 10Å to 4000Å | |About 10Å to 4000Å | ||
| | |About 10Å to 5000Å | ||
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* Metals | * Metals | ||
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* Silicon | * Silicon | ||
* | * Silicon oxide | ||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
* Carbon | |||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
Revision as of 09:54, 4 February 2014
Nickel Vanadium can be deposited by sputter evaporation. In the chart below you can compare the different deposition equipment.
| Sputter deposition (PVD co-sputter/evaporation) | Sputter deposition (Sputter-System Lesker) | ||
|---|---|---|---|
| Batch size |
|
| |
| Pre-clean | RF Ar clean | RF Ar clean | |
| Layer thickness | About 10Å to 4000Å | About 10Å to 5000Å | |
| Deposition rate | Depending on process parameters. | Depending on process parameters. | |
| Allowed materials |
|
| |
| Comment | Sputter target with NiV composition: Ni/V 93/7% | Sputter target with NiV composition: Ni/V 93/7% |