Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

Revision as of 10:33, 15 January 2008

Etching of chromium is done wet at Danchip. We have two solution for this:

Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)

	Chromium etch 1	Chromium etch 2
General description	Etch of chromium	Etch of chronium
Chemical solution	H $_{2}$ O:H $_{3}$ PO $_{4}$ 1:2	PES 77-19-04
Process temperature	50 ^oC	20 ^oC
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60(??) nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist

@@ Line 1: / Line 1: @@
-==Etching of Aluminium==
+==Etching of Chromium==
-Etching of aluminium is done wet at Danchip. We have two different solutions:
+Etching of chromium is done wet at Danchip. We have two solution for this:
-# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
+# H<math>NO_3</math>:H<math>_2</math>O:cerisulphate  90ml:1200ml:15g
-# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
+Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
-===Comparing the two solutions===
 {| border="1" cellspacing="0" cellpadding="4" align="left"
 !
-! Aluminium Etch 1
+! Chromium etch 1
-! Aluminium Etch 2
+! Chromium etch 2
 |-
 |General description
 |
-Etch of pure aluminium
+Etch of chromium
 |
-Etch of aluminium + 1.5% Si
+Etch of chronium
 |-
 |Chemical solution