Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions

From LabAdviser
BGE (talk | contribs)
Kabi (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Nitride_Etch click here]'''
==Cleaning of wafers or masks==
==Cleaning of wafers or masks==
[[Image:7-up_RR3.jpg|300x300px|right|thumb|7-up 4": positioned in cleanroom 3<br\> -Up to 19 wafers of 4" at a time.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi]]  
[[Image:7-up_RR3.jpg|300x300px|right|thumb|7-up 4": positioned in cleanroom 3<br\> -Up to 19 wafers of 4" at a time.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi]]  

Revision as of 14:57, 21 October 2013

Feedback to this page: click here

Cleaning of wafers or masks

7-up 4": positioned in cleanroom 3<br\> -Up to 19 wafers of 4" at a time.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi

Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fume hood in a beaker "Piranha" Both 7-up and Piranha removes heavy organics. Always use one of these after KOH to remove alkali ions before further processing. 7-up and Piranha are also used as cleaning solutions after stripping resist.


Comparing data for "7-up" and Piranha

"7-up" Piranha
General description

Cleaning of wafers or masks using the dedicated tanks. There are one tank for masks and glass wafers and one for 4-6" Si wafers in cleanroom 4 and one tank in cleanroom 3 for 4" Si wafers only.

Cleaning of wafers using a beaker in the fumehood in cleanroom 2. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the 7-up for wafers.

Chemical solution 98% Sulfuric acid and Ammonium sulfate 98% Sulfuric acid and Hydrogen peroxide 4:1 add H2O2 to H2SO4
Process temperature 80 oC ~70 oC the chemicals will heat up to working temperature during mixing, therefore be careful!First ad H2SO4 then H2O2
Process time

10 min.

10 min.

Allowed materials

Dependent on which bath is used, look at the text in the pictures.

All materials (in beaker).

Batch size

1-19/25 4" wafers or 4 masks at a time

1-5 4" wafer at a time

Size of substrate

4-6" wafers

2-4" wafers

7-up 6" in cleanroom 4. <br\> -Up to 25 wafers of 4" or 6" at a time.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi
7-up for masks and glass wafers positioned in cleanroom 4:<br\> -Up to 25 glass wafers of 4" at a time or 4 masks.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi, glass, chromium