Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
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| Pre-clean | | Pre-clean | ||
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|RCA clean for wafers that are not fresh form the box. | |RCA clean for wafers that are not fresh form the box. | ||
|RF Ar clean | |RF Ar clean | ||
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| Layer thickness | | Layer thickness | ||
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|~50Å to 2µm, if thicker layers are needed please ask the furnace team. | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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| Deposition rate | | Deposition rate | ||
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Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||
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|Process temperature | |Process temperature | ||
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|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | |560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | ||
|? | |? | ||
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|Step coverage | |Step coverage | ||
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|. | |. | ||
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|Adhesion | |Adhesion | ||
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|Good for fused silica, silicon oxide, silicon nitride, silicon | |Good for fused silica, silicon oxide, silicon nitride, silicon | ||
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|Substrate material allowed | |Substrate material allowed | ||
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|Fused silica, Silicon, oxide, nitride | |Fused silica, Silicon, oxide, nitride | ||
|Pyrex, fused silica, silicon, metals, oxide, nitride | |Pyrex, fused silica, silicon, metals, oxide, nitride | ||
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|Can be doped during deposition with Boron and/or Phosphorous | |Can be doped during deposition with Boron and/or Phosphorous | ||
| None | | None | ||
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