Specific Process Knowledge/Etch/Etching of Bulk Glass/AOE etching of fused silica: Difference between revisions
Jump to navigation
Jump to search
Line 12: | Line 12: | ||
!PolySi mask | !PolySi mask | ||
!Cr mask [[Image:section under construction.jpg|70px]] | !Cr mask [[Image:section under construction.jpg|70px]] | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
Line 21: | Line 19: | ||
|This recipe with a Cr mask gives the highest etch rate, but the waferuniformity is not so good. | |This recipe with a Cr mask gives the highest etch rate, but the waferuniformity is not so good. | ||
|- | |-style="background:LightGrey; color:black" | ||
style="background:LightGrey; color:black" | |||
!Substrate | !Substrate | ||
| | | | ||
Line 43: | Line 40: | ||
*300nm | *300nm | ||
Pattern defined in the ICP metal | Pattern defined in the ICP metal | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|''Coil Power'' | |''Coil Power'' |
Revision as of 14:08, 18 September 2013
Feedback to this page: click here
Comparison of masking materials and AOE processes etching fused silica