Specific Process Knowledge/Etch/Etching of Bulk Glass/AOE etching of fused silica: Difference between revisions
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Line 109: | Line 109: | ||
*6 mTorr | *6 mTorr | ||
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|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Etch rate in fused silica | !Etch rate in fused silica | ||
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|-style="background: | |-style="background:LightGrey; color:black" | ||
!Selectivity to mask | !Selectivity to mask | ||
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*~1:77 (2013-6-7) | *~1:77 (2013-6-7) | ||
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|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Linewith reduction | !Linewith reduction | ||
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*~3µm for this 11.6µm depp etch | *~3µm for this 11.6µm depp etch | ||
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|-style="background: | |-style="background:LightGrey; color:black" | ||
!Substrate size tried | !Substrate size tried | ||
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*100 mm wafer | *100 mm wafer | ||
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|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Images | !Images | ||
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Revision as of 14:03, 18 September 2013
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Comparison of masking materials and AOE processes etching fused silica
style="background:LightGrey; color:black"