Specific Process Knowledge/Thin film deposition/Wordentec: Difference between revisions

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*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium|Titanium (Ti)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium|Titanium (Ti)]]


===Sample materials that are approved for entering the chamber===
==A rough overview of the performance of Wordentec and some process related parameters==


*Silicon
{| border="2" cellspacing="0" cellpadding="10"
*Silicon oxides
|-
*Silicon nitrides
!style="background:silver; color:black;" align="left"|Purpose
*Quartz and pyrex
|style="background:LightGrey; color:black"|Deposition of metals||style="background:WhiteSmoke; color:black"|
*Metals
*E-beam evaporation
*Sputtering
*Thermal evaporation
|-
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*~10Å - 1µm
|-
|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Deposition rate||style="background:WhiteSmoke; color:black"|
*~2.5Å/s - 15Å/s
|-
!style="background:silver; color:black" align="left"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
*Approximately room temperature
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*~10<sup>-6</sup> - 10<sup>-5</sup> mbar
|-
!style="background:silver; color:black" align="left"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
* 24x2" wafers or
* 6x4" wafers or
* 6x6" wafers
*Deposition on one side of the substrate
|-
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
*Quartz wafers
*Pyrex wafers
|-
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*Photoresist
*PMMA
*PMMA
*Mylar
*SU-8
*SU-8
*Mylar
*Any metals
|-
|}

Revision as of 11:45, 19 December 2007

Wordentec QCL 800

Wordendec: positioned in cleanroom 4 in the Wordentec room

The Wordentec is a machine for:

  • Deposition of metal through E-beam deposition
  • Deposition of metal through thermal evaporation
  • Deposition of materials through DC sputtering
  • Cleaning of samples before deposition through Argon RF sputter clean

The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.

Process information

The metals available for E-beam evaporation and their standard deposition rates are:

Metal Deposition rate [Å/s]
Titanium (Ti) 10
Chromium (Cr) 10
Aluminium (Al) 10
Nickel (Ni) 10
Platinum (Pt) 10
Gold (Au) 10

Thermal evaporation materials

We currently only have Aluminium available to deposit through thermal evaporation

Sputter materials

It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently are:

A rough overview of the performance of Wordentec and some process related parameters

Purpose Deposition of metals
  • E-beam evaporation
  • Sputtering
  • Thermal evaporation
Performance Film thickness
  • ~10Å - 1µm
. Deposition rate
  • ~2.5Å/s - 15Å/s
Process parameter range Process Temperature
  • Approximately room temperature
. Process pressure
  • ~10-6 - 10-5 mbar
Substrates Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Deposition on one side of the substrate
. Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
. Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
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