Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

From LabAdviser
Choi (talk | contribs)
Choi (talk | contribs)
Line 43: Line 43:
|10Å to 1 µm
|10Å to 1 µm
|10Å to 1000 Å
|10Å to 1000 Å
|A few µm to 1500 µm
|A few µm to 1400 µm


|-
|-
Line 50: Line 50:
|10Å/s to 15Å/s
|10Å/s to 15Å/s
|About 1Å/s  
|About 1Å/s  
|About 1 - 1400Å/s
|About 1 to 200Å/s
|-
|-
|-
|-

Revision as of 12:46, 8 May 2013

Feedback to this page: click here

Nickel deposition

Nickel can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) Electroplating (Electroplating-Ni/electrochemical deposition)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 1x2" wafer or
  • 1x4" wafer or
  • 1x6" wafer
Pre-clean RF Ar clean RF Ar clean RF Ar clean None
Layer thickness 10Å to 1µm 10Å to 1 µm 10Å to 1000 Å A few µm to 1400 µm
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s About 1 to 200Å/s
Comment Only very thin layers (up to 100nm). Sample must be compatible with plating bath. Seed metal necessary.