Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni/electrochemical deposition]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni/electrochemical deposition]])
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|-  
| Batch size
| Batch size
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|Only very thin layers (up to 100nm).
|Only very thin layers (up to 100nm).
|Sample must be compatible with plating bath. Seed metal necessary.
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Revision as of 12:40, 8 May 2013

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Nickel deposition

Nickel can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) Electroplating (Electroplating-Ni/electrochemical deposition)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 1x2" wafer or
  • 1x4" wafer or
  • 1x6" wafer
Pre-clean RF Ar clean RF Ar clean RF Ar clean None
Layer thickness 10Å to 1µm 10Å to 1 µm 10Å to 1000 Å A few µm to 1500 µm
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s About 1 - 1400Å/s
Comment Only very thin layers (up to 100nm). Sample must be compatible with plating bath. Seed metal necessary.