Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE: Difference between revisions

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Etching of Silicon Oxide using AOE
==Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material==


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==Etching of micro structures in Silicon Oxide with Aluminium as masking material==
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
!Al mask
|-
|Coil Power [W]
|1800
|-
|Platen Power [W]
|180
|-
|Platen temperature [<sup>o</sup>C]
|35
|-
|C<math>_4</math>F<math>_8</math> flow [sccm]
|80
|-
|O<math>_2</math> flow [sccm]
|10
|-
|Pressure [mTorr]
|6
|-
|-
|}
|}

Revision as of 12:39, 6 December 2007

Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material

Parameter Si mask Resist mask
Coil Power [W] 1300 1000
Platen Power [W] 500 300
Platen temperature [oC] 35 0
He flow [sccm] 300 174
CF flow [sccm] 18 10
H2 flow [sccm] 0 8
Pressure [mTorr] 4 4


Typical results Si mask STS result Si mask DANCHIP result Resist mask STS result Resist mask DANCHIP result
Etch rate [nm/min] 500 300 280
Selectivity [:1] 20 4 3.2
Profile [o] >88 >88

Etching of micro structures in Silicon Oxide with Aluminium as masking material

Parameter Al mask
Coil Power [W] 1800
Platen Power [W] 180
Platen temperature [oC] 35
CF flow [sccm] 80
O flow [sccm] 10
Pressure [mTorr] 6
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