Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Thermal evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | ! Batch size | ||
| | | | ||
* | *24x 2" wafers or | ||
* | *6x 4" wafers or | ||
* | *6x 6" wafers | ||
| | |||
*1x 2" wafer or | |||
*1x 4" wafers or | |||
*Several smaller pieces | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
| - | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to about 2000Å | |10Å to about 2000Å | ||
|10Å to about 3000Å | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|From 0.4 Å/s up to about ~2Å/s | |From 0.4 Å/s up to about ~2Å/s | ||
|From 5 Å/s up to 10/s | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Allowed substrates | ! Allowed substrates | ||
| | | | ||
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* Quartz wafers | * Quartz wafers | ||
* Pyrex wafers | * Pyrex wafers | ||
| | |||
* III-V materials | |||
* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
|-style="background:LightGrey; color:black" | |||
!Allowed materials | !Allowed materials | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
|-style="background:WhiteSmoke; color:black" | |||
! Comment | |||
|Recommended for unexposed e-beam resist | |||
| | |||
|} | |} | ||
Revision as of 09:30, 17 March 2014
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Deposition of Germanium
Germanium can be deposited by thermal evaporation.
| Thermal evaporation (Wordentec) | Thermal evaporation (Physimeca) | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | - |
| Layer thickness | 10Å to about 2000Å | 10Å to about 3000Å |
| Deposition rate | From 0.4 Å/s up to about ~2Å/s | From 5 Å/s up to 10/s |
| Allowed substrates |
|
|
| Allowed materials |
|
|
| Comment | Recommended for unexposed e-beam resist |