Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

Revision as of 10:51, 24 April 2013

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Germanium can be deposited by thermal evaporation.

	Thermal evaporation (Wordentec)
Batch size	24x2" wafers or 6x4" wafers or 6x6" wafers
Pre-clean	RF Ar clean
Layer thickness	10Å to about 2000Å
Deposition rate	From 0.4 Å/s up to about ~2Å/s
Comment	Recommended for unexposed e-beam resist
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals

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+== Deposition of Germanium ==
+Germanium can be deposited by thermal evaporation.
+<br clear="all" />
+{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
+|-
+|-
+|-style="background:silver; color:black"
+!
+! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
+|-
+|-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*24x2" wafers or
+*6x4" wafers or
+*6x6" wafers
+|-
+|-style="background:LightGrey; color:black"
+! Pre-clean
+|RF Ar clean
+|-
+|-style="background:WhiteSmoke; color:black"
+! Layer thickness
+|10Å to about 2000Å
+|-
+|-style="background:LightGrey; color:black"
+! Deposition rate
+|From 0.4 Å/s up to about ~2Å/s
+|-
+|-style="background:WhiteSmoke; color:black"
+! Comment
+|Recommended for unexposed e-beam resist
+|-style="background:LightGrey; color:black"
+! Allowed substrates
+|
+* Silicon wafers
+* Quartz wafers
+* Pyrex wafers
+|-style="background:WhiteSmoke; color:black"
+!Allowed materials
+|
+* Silicon oxide
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+* SU-8
+* Metals
+|}