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| Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE]] by sputtering with Ar ions. | | Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE]] by sputtering with Ar ions. |
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| ==Etching of Gold==
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| [[Image:fumehoodetch-gold.jpg |300x300px|thumb|Wet Gold Etch: Done in the fumehood positioned in cleanroom 2]]
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| Etching of Gold is done wet at Danchip making your own set up in a beaker in the fumehood. We have two different solutions:
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| # Iodine etch: KI:I<sub>2</sub>:H<sub>2</sub>O - 100g:25g:500ml - standard at Danchip. Can be used with AZ resist as mask.
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| # Aqua Regia (Kongevand): HNO<sub>3</sub>:HCl - 1:3 - A very strong acid witch will etch most metals and are therefore used when you wish to remove all the gold from your wafer. '''you have to be very carefull when you work with Aqua Regia (Kongevand) It can generate nitrous gases witch are very toxic!!'''
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| ===Comparing the two solutions===
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| {| border="2" cellspacing="0" cellpadding="4" align="left"
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| !
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| ! Iodine based gold etch
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| ! Aqua Regia (Kongevand)
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| |'''General description'''
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| Etch of pure Gold with or without photoresist mask.
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| Etch of pure Gold (as stripper).
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| |'''Chemical solution'''
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| |KI:I<sub>2</sub>:H<sub>2</sub>O (100g:25g:500ml)
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| |HCl:HNO<sub>3</sub> (3:1)
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| |'''Process temperature'''
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| |20 <sup>o</sup>C
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| |20 <sup>o</sup>C
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| |'''Possible masking materials'''
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| Photoresist (1.5 µm AZ5214E)
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| Unmasked - used as a stripper
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| |'''Etch rate'''
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| ~100 nm/min
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| ~(??) nm/min - fast etch
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| |'''Batch size'''
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| 1-5 4" wafers at a time
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| 1-5 4" wafer at a time
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| |'''Size of substrate'''
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| 2-6" wafers
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| 2-6" wafers
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| |}
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Revision as of 10:00, 8 April 2013
Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.
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THIS PAGE IS UNDER CONSTRUCTION
Etching of Gold
Etching of Gold can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Gold Etch Methods
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Au wet etch 1
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Au wet etch 2
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IBE (Ionfab300+)
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Generel description
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Wet etch of Au using Iodine based chemistry
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Wet etch of Au using Aqua Regina
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Sputtering of Au - pure physical etch
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Etch rate range
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- ~55nm/min (acceptance test)
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Etch profile
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- Anisotropic (angles sidewalls, typical around 70 dg)
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Masking material
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- None (only used for stipping Au)
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- Any material that is allowed in the chamber, photoresists included
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Substrate size
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- Any size and number that can go inside the beaker in use
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- Any size and number that can go inside the beaker in use
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Smaller pieces glued to carrier wafer
- #1 50mm wafer
- #1 100mm wafer
- #1 150mm wafer
- #1 200mm wafer
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Allowed materials
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
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- Silicon
- Silicon oxides
- Silicon nitrides
- Metals from the +list
- Metals from the -list
- Alloys from the above list
- Stainless steel
- Glass
- III-V materials
- Resists
- Polymers
- Capton tape
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