Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2/Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2/RIE1 Travka results: Difference between revisions
New page: =This page is under construction= ===RIE1 Travka results - Etch rate and profile as function of etch load=== Seven silicon wafers have been etched in RIE1 using the "OH_polyA" recipe. A... |
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! Mask | ! Mask | ||
! Resist etch rate [nm/min] | ! Resist etch rate [nm/min] | ||
! colspan="5" | Silicon etch rate [ | ! colspan="5" | Silicon etch rate [µm/min] | ||
! colspan="5" | Trench width [ | ! colspan="5" | Trench width [µm] | ||
! colspan="5" | Under etch [ | ! colspan="5" | Under etch [µm] | ||
! colspan="5" | Silicon etch angle [<sup>o</sup>C] | ! colspan="5" | Silicon etch angle [<sup>o</sup>C] | ||
|- | |- | ||
Line 153: | Line 153: | ||
| 2.60 | | 2.60 | ||
| 4,91 | | 4,91 | ||
| 10 | | 10.96 | ||
| 51 | | 51.00 | ||
| 201 | | 201.90 | ||
| | | | ||
| | | | ||
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| 0.58 | | 0.58 | ||
| 0.61 | | 0.61 | ||
| 2 | | 2.32 | ||
| 4 | | 4.60 | ||
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Revision as of 13:45, 14 January 2013
This page is under construction
RIE1 Travka results - Etch rate and profile as function of etch load
Seven silicon wafers have been etched in RIE1 using the "OH_polyA" recipe.
All wafers have the same resist pattern ("Travka" masks), but the etch load is differs from wafer to wafer. For more information about the "Travka" masks see xxx.
After the etching the wafers have been cleaved, and trechnes with different mask widths have been inspected with SEM in order to measure resist etch rate, the Si etch depth, the under etch and the trench width. From the Si etch depth the Si etch rate has been calculated.
The resist thickness has been measured on the Filmtek before and after the RIE etching, and thus the resist etch rate is calculted.
The results of the RIE etching, including SEM images of the etching profiles, are show below.
The wafers have been etched June 2012.
Process flow and parameters
Photolithography | Resist thickness |
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Resist masks and etch loads |
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Measure resist thickness | Filmtek parameters |
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RIE preconditioning | Before preconditioning |
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RIE1 preconditioning parameters |
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RIE etching | Before etching |
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RIE1 etching parameters |
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Note |
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Measure resist thickness | Filmtek parameters |
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SEM characterization | Note |
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Mask trench widths to be measured |
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Measurements |
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Results
Silicon etch rate as function
A table with the etching result can be found here:
xxx
Mask | Resist etch rate [nm/min] | Silicon etch rate [µm/min] | Trench width [µm] | Under etch [µm] | Silicon etch angle [oC] | ||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2 µm | 4 µm | 10 µm | 50 µm | 200 µm | 2 µm | 4 µm | 10 µm | 50 µm | 200 µm | 2 µm | 4 µm | 10 µm | 50 µm | 200 µm | 2 µm | 4 µm | 10 µm | 50 µm | 200 µm | ||||
Travka5 | 67.31 | 0.6 | 0.63 | 0.63 | 0.62 | 0.61 | 2.60 | 4,91 | 10.96 | 51.00 | 201.90 | ||||||||||||
Travka10 | 63.94 | 0.57 | 0.59 | 0.59 | 0.58 | 0.61 | 2.32 | 4.60 | |||||||||||||||
Travka20 | 63.13 | 0.63 | 0.63 | 0.64 | 0.64 | 0.59 | |||||||||||||||||
Travka35 | 59.63 | 0.57 | 0.60 | 0.61 | 0.61 | 0.55 | |||||||||||||||||
Travka50 | 57.13 | 0.47 | 0.5 | 0.51 | 0.51 | 0.49 | |||||||||||||||||
Travka65 | 57.88 | 0.41 | 0.41 | 0.42 | 0.42 | 0.43 | |||||||||||||||||
Travka80 | 57.56 | 0.37 | 0.36 | 0.37 | 0.37 | 0.38 | |||||||||||||||||
Common | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers |