Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE: Difference between revisions

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|Silicon nitride (LPCVD) etch rate  
|Silicon nitride (LPCVD) etch rate  
|~60 nm/min     
|~60 nm/min
|99-108 nm/min (LN/BGE 20130512)    
|-
|-
|Selectivity to photo resist [:1]
|Selectivity to photo resist [:1]
|?  
|?  
|~between 2.5 and 4.0 (LN/BGE 20130512) 
|-
|-
|Etch rate in Si
|Etch rate in Si
|?
|?
|?
|-
|-
|Etch rate in SiO2  
|Etch rate in SiO2  
|?  
|?  
|? 
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|not tested
|not tested
|not tested
|-
|-
|Images
|Images
|.
|.
|.
|-
|-
|Comments
|Comments
|.
|.
|.
|-
|-
|}
|}

Revision as of 08:30, 16 May 2013

Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.

Parameter 1Nitride
Coil Power [W] 700
Platen Power [W] 100
Platen temperature [oC] 0
CF flow [sccm] 5
He flow [sccm] 174
H flow [sccm] 4
Pressure [mTorr] 4


Typical results Resist mask
Silicon nitride (LPCVD) etch rate ~60 nm/min 99-108 nm/min (LN/BGE 20130512)
Selectivity to photo resist [:1] ? ~between 2.5 and 4.0 (LN/BGE 20130512)
Etch rate in Si ? ?
Etch rate in SiO2 ? ?
Profile [o] not tested not tested
Images . .
Comments . .
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