Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE: Difference between revisions
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Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si. | |||
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!Parameter | !Parameter | ||
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|Coil Power [W] | |Coil Power [W] | ||
Revision as of 12:59, 3 January 2012
Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.
| Parameter | 1Nitride |
|---|---|
| Coil Power [W] | 700 |
| Platen Power [W] | 100 |
| Platen temperature [oC] | 0 |
| CF flow [sccm] | 5 |
| He flow [sccm] | 174 |
| H flow [sccm] | 4 |
| Pressure [mTorr] | 4 |
| Typical results | Resist mask |
|---|---|
| Silicon nitride (LPCVD) etch rate | ~60 nm/min |
| Selectivity to photo resist [:1] | ? |
| Etch rate in Si | ? |
| Etch rate in SiO2 | ? |
| Profile [o] | not tested |
| Images | . |
| Comments | . |