Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE: Difference between revisions

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Etching of Silicon Oxide using AOE
Etching of Silicon Oxide using AOE
{| border="2" cellspacing="1" cellpadding="3" align="center"
!Parameter
!Si mask
!Resist mask
|-
|Coil Power [W]
|1300
|1000
|-
|Platen Power [W]
|500
|300
|-
|He flow [sccm]
|300
|174
|-
|C<math>_4</math>F<math>_8</math> flow [sccm]
|18
|10
|-
|H2 flow [sccm]
|0
|8
|-
|Pressure [mTorr]
|4
|4
|-
|}

Revision as of 12:03, 6 December 2007

Etching of Silicon Oxide using AOE

Parameter Si mask Resist mask
Coil Power [W] 1300 1000
Platen Power [W] 500 300
He flow [sccm] 300 174
CF flow [sccm] 18 10
H2 flow [sccm] 0 8
Pressure [mTorr] 4 4
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