Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*Aluminium | *Aluminium | ||
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | *Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | ||
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*(Poly)Silicon | *(Poly)Silicon | ||
*Aluminium | *Aluminium | ||
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|'''Etch rate''' | |'''Etch rate''' |
Revision as of 15:27, 20 January 2012
Silicon oxide can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the oxide on the surface (backside and front side) of a wafer or for isotrotropic etching. Dry etching etches anisotropic. It etches one side of the wafer at a time and can be used to etch structures with several masking materials.
Etch of silicon oxide can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide
Wet Silicon Oxide etch (BHF, SIO Etch (wetting agent), 5%HF) | RIE | AOE | |
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General description |
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Possible masking materials |
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Etch rate |
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Batch size |
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Size of substrate |
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Allowed materials |
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