Specific Process Knowledge/Thin film deposition/Wordentec: Difference between revisions
New page: ==Wordentec QCL 800== ===Overview of equipment=== The Wordentec is a machine for: *Deposition of metal through E-beam deposition *Deposition of metal through thermal evaporation *Depo... |
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==Wordentec QCL 800== | ==Wordentec QCL 800== | ||
[[Image:Wordentec.jpg|300x300px|thumb|Wordendec: positioned in cleanroom 4 in the Wordentec room]] | |||
The Wordentec is a machine for: | The Wordentec is a machine for: | ||
*Deposition of metal through E-beam deposition | *Deposition of metal through E-beam deposition | ||
*Deposition of metal through thermal evaporation | *Deposition of metal through thermal evaporation | ||
*Deposition of materials through DC sputtering | *Deposition of materials through DC sputtering | ||
*Cleaning of samples before deposition through Argon RF sputter clean | *Cleaning of samples before deposition through Argon RF sputter clean | ||
The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. | The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. | ||
Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. | Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. | ||
The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources. | The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources. | ||
==Process information== | |||
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===The metals available for E-beam evaporation and their standard deposition rates are:=== | ===The metals available for E-beam evaporation and their standard deposition rates are:=== | ||
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*Chromium (Cr) | *Chromium (Cr) | ||
*Titanium (Ti) | *Titanium (Ti) | ||
===Sample materials that are approved for entering the chamber=== | |||
*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Quartz and pyrex | |||
*Metals | |||
*Photoresist | |||
*PMMA | |||
*SU-8 | |||
*Mylar | |||
Revision as of 12:35, 18 December 2007
Wordentec QCL 800
The Wordentec is a machine for:
- Deposition of metal through E-beam deposition
- Deposition of metal through thermal evaporation
- Deposition of materials through DC sputtering
- Cleaning of samples before deposition through Argon RF sputter clean
The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.
Process information
The metals available for E-beam evaporation and their standard deposition rates are:
| Metal | Deposition rate [Å/s] |
|---|---|
| Titanium (Ti) | 10 |
| Chromium (Cr) | 10 |
| Aluminium (Al) | 10 |
| Nickel (Ni) | 10 |
| Platinum (Pt) | 10 |
| Gold (Au) | 10 |
Thermal evaporation materials
We currently only have Al available to deposit through thermal evaporation
Sputter materials
It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently are:
- TiW alloy (10%/90% by weight)
- Aluminium (Al)
- Chromium (Cr)
- Titanium (Ti)
Sample materials that are approved for entering the chamber
- Silicon
- Silicon oxides
- Silicon nitrides
- Quartz and pyrex
- Metals
- Photoresist
- PMMA
- SU-8
- Mylar