Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!-- '''Recipe name''' --> '''CHF3_t2''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |<!-- '''Recipe name''' --> '''CHF3_t2''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> 5:00 | |<!--'''Process time'''--> 5:00 | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 29/02/2024 | ||
|<!--'''SEM picture'''--> [[File:Si3N4-pat2-chf3t2-250.png|200px]] [[File:Si3N4-pat2-chf3t2-500.png|200px]] [[File:Si3N4-pat2-chf3t2-1000.png|200px]] [[File:Si3N4-pat2-chf3t2-2000.png|200px]] | |<!--'''SEM picture'''--> [[File:Si3N4-pat2-chf3t2-250.png|200px]] [[File:Si3N4-pat2-chf3t2-500.png|200px]] [[File:Si3N4-pat2-chf3t2-1000.png|200px]] [[File:Si3N4-pat2-chf3t2-2000.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:SiN chf3.t2 sidewalls 01.png|200px]] [[File:SiN chf3.t2 sidewalls 02.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:SiN chf3.t2 sidewalls 01.png|200px]] [[File:SiN chf3.t2 sidewalls 02.png|200px]] |
Revision as of 16:22, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests