Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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| Thermal deposition of Ag (line-of-sight) | | Thermal deposition of Ag (line-of-sight) | ||
| Thermal deposition of Ag (line-of-sight, good thickness uniformity) | | Thermal deposition of Ag (line-of-sight, good thickness uniformity) | ||
| Sputter deposition of Ag (some step coverage) | | Sputter deposition of Ag (some step coverage, should have good uniformity) | ||
| Sputter deposition of Ag (some step coverage) | | Sputter deposition of Ag (some step coverage) | ||
| Sputter deposition of Ag including pulsed DC and HiPIMS | | Sputter deposition of Ag including pulsed DC and HiPIMS |
Latest revision as of 14:58, 22 January 2024
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Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
Thermal deposition of Silver
Comparison of deposition equipment for silver
E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Thermal evaporation (Thermal Evaporator) | Thermal evaporation (Wordentec) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
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General description | E-beam deposition of Ag (line-of-sight, very good thickness uniformity) | Thermal deposition of Ag (line-of-sight) | Thermal deposition of Ag (line-of-sight, good thickness uniformity) | Sputter deposition of Ag (some step coverage, should have good uniformity) | Sputter deposition of Ag (some step coverage) | Sputter deposition of Ag including pulsed DC and HiPIMS |
Pre-clean | Ar ion etch (only in E-beam evaporator Temescal) | none | none | none | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm* | 10Å to 0.5µm ** | 10Å to 0.5µm **(0.5µm not on all wafers) | 10Å to about 3000Å | 10Å to about 2000Å | 10Å to ? |
Deposition rate | 1 to 10Å/s | 5Å/s | 1 to 10Å/s | Depending on process parameters (also written in the logbook). | Dependent on process parameters. | Dependent on process parameters. |
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Allowed materials |
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Comment | Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. | Pumpdown approx 15 min. | Only very thin layers. Pumpdown approx 1.5 hours. | Pumpdown approx. 1.5 hours | Load and transfer < 10 minutes | Load and transfer approx. 12 minutes |
* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk
** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk
*** Please ask responsible staff for 8" wafer holder