Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''Recipe''' | ! '''Recipe''' | ||
! '''Recipe parameters''' | ! '''Recipe parameters''' | ||
! ''' | ! '''Duration (min)''' | ||
! '''Date''' | ! '''Date''' | ||
! '''SEM picture''' | ! '''SEM picture''' |
Revision as of 12:17, 14 December 2023
Recipes and results - CHF3 tests
Tests performed with AZ5214E resist:
Tests performed with 915nm UVN resist + 88nm BARC:
Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
---|---|---|---|---|---|---|---|---|
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
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CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |