Specific Process Knowledge/Thin film deposition/Deposition of Niobium Titanium Nitride: Difference between revisions

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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film thickness
!Film thickness
|
*Stoichiometric nitride: ~5 nm - ~230 nm
*Silicon rich (low stress) nitride: ~5 nm - ~335 nm
Thicker nitride layers can be deposited over more runs (maximum two)
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*~40 nm - 10 µm
|
|
*limited by process time.  
*limited by process time.  
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|-style="background:LightGrey; color:black"
!Process temperature
!Process temperature
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*Stoichiometric nitride: 780 °C - 800 °C
*Silicon rich (low stress) nitride: 810 °C - 845 °C
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*300 °C
|
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*Up to 600 °C
*Up to 600 °C
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Good
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*Less good
|
|
*some step coverage possible, especially by HIPIMS
*some step coverage possible, especially by HIPIMS
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Film quality
!Film quality
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*Deposition on both sides og the substrate
*Dense film
*Few defects
|
|
*Deposition on one side of the substrate
*Deposition on one side of the substrate
*Less dense film
*Incorporation of hydrogen in the film
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*Deposition on one side of the substrate
*Less dense film
*Properties including density tunable (requires process development)
*Properties including density tunable (requires process development)
|
|
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*unknown quality
*unknown quality
*likely O-contamination
*likely O-contamination
|-
|-
|-style="background:WhiteSmoke; color:black"
!KOH etch rate (80 <sup>o</sup>C)
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*Expected <1 Å/min
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*Dependent on recipe: ~1-10 Å/min
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*Unknown
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*Unknown
|-
|-
|-style="background:LightGrey; color:black"
!BHF etch rate
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*Very low ([[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride|more info here]])
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*Very high compared the LPCVD nitride ([[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride|more info here]])
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*Unknown
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*Unknown
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Batch size
!Batch size
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*1-15 100 mm wafers (4" furnace), 1-25 100 mm wafers (6" furnace)
*1-25 150 mm wafers (only 6" furnace)
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*Several smaller samples
*1-7 50 mm wafers
*1 100 mm wafers
*1 150 mm wafer
Depending on what PECVD you use
|
|
*many smaller samples
*many smaller samples
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
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*Silicon
*Silicon oxide
*Silicon nitride
*Pure quartz (fused silica)
Processed wafers have to be RCA cleaned
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*Silicon
*Silicon oxide (with boron, phosphorous)
*Silicon nitrides (with boron, phosphorous)
*Pure quartz (fused silica)
*III-V materials (in PECVD4)
*Small amount of metals (in PECVD3)
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|
*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets

Revision as of 16:37, 5 October 2023


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Deposition of Niobium Titanium Nitride

Deposition of NbTiN can be done by reactive sputtering.

The preferred tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition

Sputter-System Metal-Nitride(PC3) Lesker sputter system
Generel description
  • Reactive sputtering
  • Pulsed DC reactive sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering)
 *Reactive sputtering
Stoichiometry
  • SixNy (Sputter-System Metal-Nitride(PC3))

Tunable composition

  • Unknown
Film thickness
  • limited by process time.
  • Deposition rate likely faster than Sputter-System (Lesker)
  • limited by process time.
  • Deposition rate ~ 1-5 nm/min
Process temperature
  • Up to 600 °C
  • Up to 400 °C
Step coverage
  • some step coverage possible, especially by HIPIMS
  • some step coverage possible but amount unknown
Film quality
  • Deposition on one side of the substrate
  • Properties including density tunable (requires process development)
  • Deposition on one side of the substrate
  • unknown quality
  • likely O-contamination
Batch size
  • many smaller samples
  • Up to 10*100 mm or 150 mm wafers
  • Several smaller samples
  • 1-several 50 mm wafers
  • 1*100 mm wafers
  • 1*150 mm wafer
Allowed materials
  • Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
  • Any





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