Specific Process Knowledge/Thin film deposition/Deposition of Niobium Titanium Nitride: Difference between revisions
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Revision as of 16:03, 5 October 2023
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Deposition of Niobium Titanium Nitride
Deposition of NbTiN can be done by reactive sputtering.
The preferred tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:
Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition
Sputter-System Metal-Nitride(PC3) | Lesker sputter system | |||
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Generel description |
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*Reactive sputtering | ||
Stoichiometry |
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Silicon nitride can be doped with boron or phosphorus |
Tunable composition |
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Film thickness |
Thicker nitride layers can be deposited over more runs (maximum two) |
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Process temperature |
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Step coverage |
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Film quality |
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KOH etch rate (80 oC) |
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BHF etch rate |
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Batch size |
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Depending on what PECVD you use |
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Allowed materials |
Processed wafers have to be RCA cleaned |
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