Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch: Difference between revisions
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|<!--'''Process time'''--> 20:00 min | |<!--'''Process time'''--> 20:00 min | ||
|<!--'''Date'''--> Sept 2023 | |<!--'''Date'''--> Sept 2023 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:CF4lowCP_20m_pat_C03.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> | |<!--'''SEM pic w/ no resist'''--> | ||
|<!--'''Redeposition - top view--> [[File: | |<!--'''Redeposition - top view--> [[File:CF4owCP_20min_af_PA_03.png|200px]] | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> 23.8 nm/min <br> +/- 11% | |<!--'''Etch rate in SiO2'''--> 23.8 nm/min <br> +/- 11% | ||
|<!--'''Etch rate in resist'''--> 20,6 nm/min <br> +/- 19.4% | |<!--'''Etch rate in resist'''--> 20,6 nm/min <br> +/- 19.4% | ||
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|<!--'''Process time'''--> 10:00 min | |<!--'''Process time'''--> 10:00 min | ||
|<!--'''Date'''--> Feb 2023 | |<!--'''Date'''--> Feb 2023 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:CF4lowCP_35.10_10.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> [[File: | |<!--'''SEM pic w/ no resist'''--> [[File:Low35_10_af_PA_12.png|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||
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|<!--'''Process time'''--> 10:00 min | |<!--'''Process time'''--> 10:00 min | ||
|<!--'''Date'''--> Feb 2023 | |<!--'''Date'''--> Feb 2023 | ||
|<!--'''SEM picture'''--> [[File:CF4lowCP. | |<!--'''SEM picture'''--> [[File:CF4lowCP.right_01.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> [[File: | |<!--'''SEM pic w/ no resist'''--> [[File:Low45_0_af_PA_05.png|200px]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||
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|<!--'''Process time'''--> 10:00 min | |<!--'''Process time'''--> 10:00 min | ||
|<!--'''Date'''--> Feb 2023 | |<!--'''Date'''--> Feb 2023 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:CF4owCP_20min_af_PA_03.png|200px]] | ||
|<!--'''SEM pic w/ no resist'''--> | |<!--'''SEM pic w/ no resist'''--> | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> |
Revision as of 14:03, 3 October 2023
More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch
Tests performed by Maria Farinha @DTU Nanolab
Recipes and results - CF4 / H2 tests
Recipes and results - CHF3 tests