Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

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!  
!  
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
Line 36: Line 36:
! Pre-clean
! Pre-clean
|none
|none
|Ar ion beam clean
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to about 2000Å (in total distributed on all loaded wafers)
|10 Å to about 2000 Å (in total distributed on all loaded wafers)
|10Å to about 1000 nm
|few nm to about 1 µm*
|10Å to at least 1000 Å
|10 Å to at least 1000 Å
|10Å to ?
|10 Å to ?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|From 0.4 Å/s up to about ~2Å/s  
|0.4 Å/s - ~ 2 Å/s  
|From 1 Å/s up to 5 Å/s  
|1 Å/s - 5 Å/s  
|Depends on deposition parameters
|Depends on deposition parameters
|Depends on deposition parameters
|Depends on deposition parameters
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Allowed substrates
! Allowed materials
|
|
*Almost any that does not degas. See also the cross-contamination sheet
*Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
|
|
*Almost any that does not degas. See also the cross-contamination sheet
*Almost any that does not degas. See also the cross-contamination sheet
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"


!Allowed materials


|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
*Almost any as above
|
*Almost any as above
|-style="background:LightGrey; color:black"
! Comment
|Recommended for unexposed e-beam resist
|
|
|
|}
|}
'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.

Revision as of 15:04, 19 January 2024

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All text by DTU Nanolab staff

Deposition of Germanium

Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

Thermal deposition


Ge deposition equipment comparison


Thermal evaporation (Wordentec) E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Sputtering (Lesker) Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description Thermal deposition of Ge E-beam deposition of Ge Sputter deposition of Ge Sputter deposition of Ge
Pre-clean none Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean
Layer thickness 10 Å to about 2000 Å (in total distributed on all loaded wafers) few nm to about 1 µm* 10 Å to at least 1000 Å 10 Å to ?
Deposition rate 0.4 Å/s - ~ 2 Å/s 1 Å/s - 5 Å/s Depends on deposition parameters Depends on deposition parameters
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers or

Many small pieces

  • Up to 4 x 6" wafer or
  • 3x 8" wafers (ask for special holder)
  • Many smaller pieces
  • 1x6" wafer or
  • 1x4" wafer or

smaller pieces

  • 10x6" or 4" wafers
  • many smaller pieces
Allowed materials
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
  • Almost any that does not degas. See also the cross-contamination sheet
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheets

* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.

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