Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
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==Silicon nitride etch - fast - with resist mask== | ==Silicon nitride etch - fast - with resist mask== |
Latest revision as of 12:01, 3 February 2023
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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated
Silicon nitride etch - fast - with resist mask
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2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
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30sec etch
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30 sec etch - 1µm pitch
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30 sec etch - 3µm pitch
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30 sec etch - 3 µm pitch
Silicon nitride etch with the standard silicon oxide etch
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Profile of lines with 1µm pitch
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Profile of lines with 4µm pitch
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Profile of 2µm line - zoom in on 4µm pitch