Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

From LabAdviser
Eves (talk | contribs)
No edit summary
Reet (talk | contribs)
No edit summary
Line 17: Line 17:
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
Line 22: Line 23:
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
|-
|-
Line 29: Line 31:
|Ar ion source
|Ar ion source
|none
|none
|RF Ar clean
|RF Ar clean
|RF Ar clean


Line 37: Line 40:
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
|10Å - ? ''discuss with staff''
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
Line 43: Line 47:
|0.5Å/s to 10Å/s
|0.5Å/s to 10Å/s
|up to 3.74 Å/s
|up to 3.74 Å/s
|''not known yet, probably similar to 'old' Lesker system
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
Line 59: Line 65:
*1x6" wafer
*1x6" wafer
*smaller pieces
*smaller pieces
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


Line 93: Line 102:
* Metals  
* Metals  
* Carbon
* Carbon
| Almost any that does not outgas


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|
|
|
|
|
|
|
|}
|}


'''*''' ''If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.''
'''*''' ''If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.''

Revision as of 10:22, 9 June 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Platinum deposition

Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pt E-beam deposition of Pt Sputter deposition of Pt Sputter deposition of Pt
Pre-clean Ar ion source none RF Ar clean RF Ar clean
Layer thickness 10Å - 600nm* 10Å - 600nm* 10Å - 600nm* 10Å - ? discuss with staff
Deposition rate 0.5Å/s to 10Å/s 0.5Å/s to 10Å/s up to 3.74 Å/s not known yet, probably similar to 'old' Lesker system
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x4" wafer or
  • 1x6" wafer
  • smaller pieces
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Almost any that does not outgas
Comment

* If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.