Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
No edit summary |
|||
| Line 13: | Line 13: | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
| Line 30: | Line 30: | ||
!Pre-clean | !Pre-clean | ||
|Ar ion | |Ar ion etch (only in E-beam evaporator Temescal) | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| Line 69: | Line 69: | ||
| | | | ||
* | * Almost any that does not degas - also if you plan to use heating. | ||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
| | | | ||
* | * Almost any that does not degas. | ||
* | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet] | ||
| | | | ||
*Almost | *Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | | | ||
Revision as of 14:52, 19 January 2024
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Deposition of Cu
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.
| E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |||||
|---|---|---|---|---|---|---|---|
| General description | E-beam deposition of Cu
(line-of-sight deposition) |
Sputter deposition of Cu
(not line-of-sight deposition) |
Sputter deposition of Cu
(not line-of-sight deposition) | ||||
| Pre-clean | Ar ion etch (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean | ||||
| Layer thickness | 10Å to 1µm* | 10Å to 1µm** | 10Å to 1µm** | ||||
| Deposition rate | 1-10 Å/s | ~ 1 Å/s | Depends on process parameters, at least up to 8.7 Å/s, see conditions here | ||||
| Batch size |
|
|
| ||||
| Allowed materials |
|
|
Comment |
* To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)
** To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)
Studies of Cu deposition
Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator
Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)