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== Nickel deposition ==
== Nickel deposition ==
Nickel can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipment.
Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.  


*[[/Electroplating of nickel|Electroplating of nickel]]
Some process information is available here for e-beam evaporated films:
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].


 
In the chart below you can compare the different deposition equipment:


{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
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! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
|-  
|-  


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|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Electroplating of Nickel
|-
|-


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|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|None
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|10 Å to 5000 Å **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|~ 20 µm to ~ 1000 µm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~ 10-250 Å/s


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Up to 10x4" or 6" wafers
*Up to 10x4" or 6" wafers
*Many smaller pieces
*Many smaller pieces
|
*1x2" wafer or
*1x4" wafer or
*1x6" wafer


|-
|-
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|
|
*Almost any that do not outgas. Check the cross-contamination sheet in Labmanager.
*Almost any that do not outgas. Check the cross-contamination sheet in Labmanager.
|
 
Base materials:<br>
*Silicon
*Polymers with Tg > 75°C
*Metals (bulk)
*Cross-linked or hard baked resists supported by one of the above mentioned materials
Seed metals:<br>
* NiV (75 - 100 nm recommended)
* Ti (~5 nm) + Au (75-100 nm recommended)
* Cr (~5 nm) + Au (75-100 nm recommended)
* TiW
* Cr
|-
|-
|-
|-
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|
|
*May use high-strength magnet for deposition
*May use high-strength magnet for deposition
|
*Sample must be compatible with plating bath (pH = 3,65 and T = 52°C). Seed metal necessary.
|-
|-


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