Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
No edit summary
No edit summary
Line 1: Line 1:
The AOE was upgraded in the spring 2010 and there has been a lot of problems with it since. It is running now but we still do not have a very good recipe. Ask Berit (BGE) for the resent progress in process development.
The AOE was upgraded in the spring 2010 and there has been a lot of problems with it since. It is running now but we still do not have a very good recipe. Ask Berit (BGE) for the resent progress in process development.
==Etching of micro structures in Silicon Oxide with photoresist as masking material==
The recipe for oxide etching at the moment is the one called: m_res_ny. The parameters and results so fare are as follows:
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
!Resist mask
|-
|Coil Power [W]
|1300
|-
|Platen Power [W]
|200
|-
|Platen temperature [<sup>o</sup>C]
|0
|-
|He flow [sccm]
|174
|-
|C<math>_4</math>F<math>_8</math> flow [sccm]
|5
|-
|H<math>_2</math> flow [sccm]
|4
|-
|Pressure [mTorr]
|4
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Negative Resist mask DANCHIP result
|-
|Etch rate [nm/min]
|~230nm/min
|-
|Selectivity [:1]
|~3.6
|-
|Profile [<sup>o</sup>]
|~90
|-
|Images
|.
|-
|Comments
|A negative resist process was done to make the mask. I have not had so good results with a positive resist process.
|-
|}


<!--
<!--

Revision as of 16:45, 15 November 2010

The AOE was upgraded in the spring 2010 and there has been a lot of problems with it since. It is running now but we still do not have a very good recipe. Ask Berit (BGE) for the resent progress in process development.

Etching of micro structures in Silicon Oxide with photoresist as masking material

The recipe for oxide etching at the moment is the one called: m_res_ny. The parameters and results so fare are as follows:


Parameter Resist mask
Coil Power [W] 1300
Platen Power [W] 200
Platen temperature [oC] 0
He flow [sccm] 174
CF flow [sccm] 5
H flow [sccm] 4
Pressure [mTorr] 4


Typical results Negative Resist mask DANCHIP result
Etch rate [nm/min] ~230nm/min
Selectivity [:1] ~3.6
Profile [o] ~90
Images .
Comments A negative resist process was done to make the mask. I have not had so good results with a positive resist process.



Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_AOE&oldid=4371"