Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium

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Chromium etch in ICP metal - small substrate using carrier

The Chromium etch was carried out on the following substrate stack: 2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. The work was carried out be Erol Zekovic @Nanotech and BGHE@nanolab

Cr etch

Parameter	Cr etch
Cl2 (sccm)	65
O2 (sccm)	15
Pressure (mTorr)	15
Coil power (W)	300
Platen power (W)	15
Temperature (oC)	50
Spacers (mm)	100
Etch rate (nm/min)	~32 (Date: 2014-08-13)
Zep520A resist selectivity	NA
Comment	Was masked by capton tape

• Etching lines in 100nm Cr with the Cr etch for 3 min with 300 nm DUV resist BGHE@Nanolab Feb 2022
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Chromium etch of hardmask for silicon nitride etching by Anders Simonsen@nbi.ku

Added by bghe@Nanolab

Chromium etch in ICP metal on a thick glass substrate

The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and patterned by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.

Cr etch by bghe@nanolab

Parameter	Cr etch
Cl2 (sccm)	65
O2 (sccm)	15
Pressure (mTorr)	15
Coil power (W)	300
Platen power (W)	15
Temperature (oC)	50 (no back side cooling)
Spacers (mm)	100
Etch rate (nm/min)	~14
Zep520A resist selectivity	~0.9
Comment	.