Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions

From LabAdviser
Reet (talk | contribs)
Eves (talk | contribs)
No edit summary
Line 2: Line 2:
'''Feedback to this page''': '''[mailto:LabAdviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silver click here]'''
'''Feedback to this page''': '''[mailto:LabAdviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silver click here]'''
<!-- Replace "http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Aluminium" with the link to the Labadviser page-->
<!-- Replace "http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Aluminium" with the link to the Labadviser page-->
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


<br clear="all" />
<br clear="all" />

Revision as of 17:08, 1 February 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of Silver

Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


Sputter deposition of Silver

Thermal deposition of Silver

Comparison of deposition equipment for silver

E-beam evaporation (Temescal) Thermal evaporation (Thermal Evaporator) Thermal evaporation (Wordentec) Sputter deposition (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Ag Thermal deposition of Ag Thermal deposition of Ag Sputter deposition of Ag Sputter deposition of Ag Sputter deposition of Ag including pulsed DC and HiPIMS
Pre-clean Ar ion beam bombardment none none none RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 0.5µm ** 10Å to 0.5µm **(0.5µm not on all wafers) 10Å to about 3000Å 10Å to about 2000Å 10Å to ?
Deposition rate 1 to 10Å/s 5Å/s 1 to 10Å/s Depending on process parameters (also written in the logbook). Dependent on process parameters. Dependent on process parameters.
Batch size
  • Up to 4x6" wafers or
  • Up to 3x8" wafers *** or
  • smaller pieces
  • Up to 1x8" wafers
  • smaller pieces

very bad uniformity above 4" wafers

  • 6x6" wafers or
  • 6x4" wafers or
  • 24x2" wafers
  • 6x6" wafers or
  • 6x4" wafers or
  • 24x2" wafers
  • 1x6" wafers or
  • 1x4" wafers or
  • smaller pieces
  • up to 10x6" wafers or
  • up to 10x4" wafers or
  • many smaller pieces
Allowed materials
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
Comment Pumpdown approx 20 min. Possible to tilt the wafer. Pumpdown approx 15 min. Only very thin layers. Pumpdown approx 1 hour. Load and transfer approx. 12 minutes

* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk

** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk

*** Please ask responsible staff for 8" wafer holder