Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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| E-beam deposition of Ta | | E-beam deposition of Ta | ||
(line-of-sight deposition) | (line-of-sight deposition) | ||
| Sputter deposition of Ta | |||
(not line-of-sight) | |||
| Sputter deposition of Ta | | Sputter deposition of Ta | ||
(not line-of-sight) | (not line-of-sight) | ||
| Line 26: | Line 29: | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion source | |Ar ion source | ||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to 0.2 µm* | |10Å to 0.2 µm* | ||
|10Å to ? | |||
|10Å to ? | |10Å to ? | ||
|- | |- | ||
| Line 36: | Line 41: | ||
! Deposition rate | ! Deposition rate | ||
|0.5Å/s to 10Å/s | |0.5Å/s to 10Å/s | ||
|~0.3Å/s | |||
|~0.3Å/s | |~0.3Å/s | ||
|- | |- | ||
| Line 48: | Line 54: | ||
*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
| | |||
*Pieces or | |||
*10x4" wafer or | |||
*10x6" wafer | |||
|- | |- | ||
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*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
* Carbon | |||
| | | | ||
* Silicon | * Silicon | ||
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| Tantalum deposition heats the chamber* | | Tantalum deposition heats the chamber* | ||
| | | | ||
| 3-inch Ta target | |||
|} | |} | ||
'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | '''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | ||
Revision as of 12:59, 31 August 2022
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Tantalum deposition
Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.
You can read more about Ta sputter deposition here.
| E-beam evaporation (Temescal) | Sputter (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|
| General description | E-beam deposition of Ta
(line-of-sight deposition) |
Sputter deposition of Ta
(not line-of-sight) |
Sputter deposition of Ta
(not line-of-sight) |
| Pre-clean | Ar ion source | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 0.2 µm* | 10Å to ? | 10Å to ? |
| Deposition rate | 0.5Å/s to 10Å/s | ~0.3Å/s | ~0.3Å/s |
| Batch size |
|
|
|
| Allowed materials |
|
|
|
| Comment | Tantalum deposition heats the chamber* | 3-inch Ta target |
* The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the Thin film group.