Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions

From LabAdviser
Eves (talk | contribs)
Eves (talk | contribs)
Line 36: Line 36:
*Not known
*Not known
|
|
*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]].
*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]].
|-
|-


Line 54: Line 54:
* 0.5-2 nm/min
* 0.5-2 nm/min
|
|
* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]])
* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]])
|-
|-



Revision as of 12:43, 20 July 2022

Feedback to this page: click here


Deposition of ITO

ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.

We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:

Comparison of the methods for deposition of ITO

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1)
Generel description
  • RF sputtering of an ITO target - reactive sputtering possible
  • RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
  • Pulsed DC sputtering of an ITO target - reactive sputtering possible
Stoichiometry
  • Not known
Film Thickness
  • few nm - ~ 200 nm
  • few nm - ~ 1 μm
Deposition rate
  • 0.5-2 nm/min
Step coverage
  • unknown
  • unknown
Process Temperature
  • Up to 400 °C (tool limit)
  • Up to 600 °C (tool limit)
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
Allowed materials
  • almost any