Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions
Line 36: | Line 36: | ||
*Not known | *Not known | ||
| | | | ||
*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]]. | *In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]]. | ||
|- | |- | ||
Line 54: | Line 54: | ||
* 0.5-2 nm/min | * 0.5-2 nm/min | ||
| | | | ||
* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]]) | * at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]]) | ||
|- | |- | ||
Revision as of 12:43, 20 July 2022
Feedback to this page: click here
Deposition of ITO
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.
We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:
Comparison of the methods for deposition of ITO
Sputter-System(Lesker) | Sputter-System Metal-Oxide(PC1) | |
---|---|---|
Generel description |
|
|
Stoichiometry |
|
|
Film Thickness |
|
|
Deposition rate |
|
|
Step coverage |
|
|
Process Temperature |
|
|
Substrate size |
|
|
Allowed materials |
|
|