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Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,760 edits
removed physimeca
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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! General description
! General description
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
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! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion bombardment
|RF Ar clean
|
|
|RF Ar clean
|RF Ar clean
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|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 2000 Å
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
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|2-10 Å/s
|2-10 Å/s
|10-15 Å/s
|10-15 Å/s
|1-10 Å/s
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
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*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
* Pieces or
* Pieces or
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* Mylar  
* Mylar  
* SU-8  
* SU-8  
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Almost any that do not outgas.
* Almost any that do not outgas.
|
|
*Almost any that do not outgas. Check the cross-contamination sheets in Labmanager.
*Almost any that do not outgas. Check the cross-contamination sheet in Labmanager.
|
|
Base materials:<br>
Base materials:<br>
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