Specific Process Knowledge/Thin film deposition/Deposition of Niobium: Difference between revisions

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!Layer thickness
!Layer thickness
|10Å to 1µm*
|10Å to 200 nm*
|10Å to 1µm**  
|10Å to 600 nm**  


|-
|-
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! Deposition rate
! Deposition rate
|0.5Å/s to 3Å/s
|0.5Å/s to 5Å/s
| ~1Å/s
| ~1Å/s
|-
|-
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|}
|}


'''*''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''


'''**''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''

Revision as of 13:47, 3 October 2021

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Deposition of Nb

Niobium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the deposition equipment.

E-beam evaporation (Temescal) Sputter deposition (Lesker)
General description E-beam deposition of Nb

(line-of-sight deposition)

Sputter deposition of Nb

(not line-of-sight deposition)

Pre-clean Ar ion bombardment RF Ar clean
Layer thickness 10Å to 200 nm* 10Å to 600 nm**
Deposition rate 0.5Å/s to 5Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment Substrates get heated during the deposition.

For 100 nm Nb at 2 Å/s, the substrate reached about 105 °C.

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

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