Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
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==Silicon nitride etch with | ==Silicon nitride etch - fast - with resist mask== | ||
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5"> | <gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5"> | ||
Revision as of 17:44, 20 December 2022
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Silicon nitride etch - fast - with resist mask
- Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab
2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
30sec etch
30 sec etch - 1µm pitch
30 sec etch - 3µm pitch
30 sec etch - 3 µm pitch
Silicon nitride etch with the standard silicon oxide etch
- Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015
Profile of lines with 1µm pitch
Profile of lines with 4µm pitch
Profile of 2µm line - zoom in on 4µm pitch
