Specific Process Knowledge/Etch/OES: Difference between revisions
| Line 9: | Line 9: | ||
== Optical Emission Spectroscopy == | == Optical Emission Spectroscopy == | ||
As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> | As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> gas. The gas is fed to the process chamber using mass flow controllers. Driven by the RF generators (both coil and platen) the plasma will decompose the gas in a series of dissociation and ionisation mechanisms to form fluorine radicals F<sup>*</sup> that will aggressively react with the silicon atoms at the part of the surface of the wafer that is not masked. | ||
=fdgsdfg= | =fdgsdfg= | ||