Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions

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 The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This rougness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure. Below is a table for three cases.
-The "From SiO2 target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO2 target. The film thicknesses were around 42 nm.
+The "From SiO<math>_2</math> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<math>_2</math> target. The film thicknesses were around 42 nm.
-The "From Si target (DC sputter)" study was done on clean Si substrates. The sputter pressure 3 mTorr using DC reactive sputtering of a Si target. Oxygen was added to the argon sputter gas. Above 10% O2 the gun seems to oxidize (at this sputter power). The figure shows the difference in AFM images between no RF bias (wafer 12) and RF bias (Wafer 21)
+The "From Si target (DC sputter)" study was done on clean Si substrates. The sputter pressure 3 mTorr using DC reactive sputtering of a Si target. Oxygen was added to the argon sputter gas. Above 10% O<math>_2</math> the gun seems to oxidize (at this sputter power). The figure shows the difference in AFM images between no RF bias (wafer 12) and RF bias (Wafer 21)
-The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O2 was added to wafer 25 and 26 to make Ta2O5. In order to get fully oxidized films, up to 30-45% O2 should be added. Consult the thesis of Carsten Christensen for details on Ta2O5.
+The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<math>_2</math> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<math>_2</math> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>.
 Other studies on metals (NiFe/MnIr)  show only limited effect of the substrate bias on the roughness.